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Brain areas interconnected to ventral pathway circuits are independently able to induce enhancement in object recognition memory and cause reversal in object recognition memory deficit

Brain areas interconnected to ventral pathway circuits are independently able to induce enhancement in object recognition memory and cause reversal in object recognition memory deficit

Masmudi-Martín M, Navarro-Lobato I, López-Aranda MF, Quiros-Ortega ME, Carretero-Rey M, Garcia-Garrido MF, López Téllez JF, Jiménez-Recuerda I, Muñoz de Leon López CA, Khan ZU (2024) Brain areas interconnected to ventral pathway circuits are independently able to induce enhancement in object recognition memory and cause reversal in object recognition memory deficit. CNS Neurosci Ther 30(4):e14727. doi: 10.1111/cns.14727 PMID: 38644593

Objective: Use OX7-SAP to create an object-recognition memory deficit model in rats.

Summary: Ventral pathway circuits are responsible for part of object recognition memory. Lesioning with OX7-SAP, a way to selectively remove CD90-expressing neuronal cells, can create a knockout model of object recognition memory, and lesioning in specific parts of the brain can construct a map of object recognition memory function.

Usage: Rats were lesioned with OX7-SAP in either the brain’s perirhinal cortex, frontal cortex, or Area V2 and assessed for object recognition memory deficits. (0.2μg in 1μL, IT-02)